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2005

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Top-gate microcrystalline silicon TFTs processed at low temperature (<200ºC)

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http://dx.doi.org/10.1016/j.tsf.2005.01.070

Resum

N-type as well P-type top-gate microcrystalline silicon thin film transistors (TFTs) are fabricated on glass substrates at a maximum temperature of 200 °C. The active layer is an undoped μc-Si film, 200 nm thick, deposited by Hot-Wire Chemical Vapor. The drain and source regions are highly phosphorus (N-type TFTs) or boron (P-type TFTs)-doped μc-films deposited by HW-CVD. The gate insulator is a silicon dioxide film deposited by RF sputtering. Al-SiO 2-N type c-Si structures using this insulator present low flat-band voltage,-0.2 V, and low density of states at the interface D it=6.4×10 10 eV -1 cm -2. High field effect mobility, 25 cm 2/V s for electrons and 1.1 cm 2/V s for holes, is obtained. These values are very high, particularly the hole mobility that was never reached previously.

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Transistors, Semiconductors, Silici, Temperatures baixes

Matèries (anglès)

Transistors, Semiconductors, Silicon, Low temperatures

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Citació

SABOUNDJI, A., et al. Top-gate microcrystalline silicon TFTs processed at low temperature (<200ºC). Thin Solid Films. 2005. Vol. 487, num. 1-2, pags. 227-231. ISSN 0040-6090. [consulted: 26 of June of 2026]. Available at: https://hdl.handle.net/2445/47424

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