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Si us plau utilitzeu sempre aquest identificador per citar o enllaçar aquest document: https://hdl.handle.net/2445/47382

Optimisation of doped microcrystalline silicon films deposited at very low temperatures by Hot-Wire CVD

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http://dx.doi.org/10.1016/S0921-5107(99)00308-6

Resum

In this paper we present new results on doped μc-Si:H thin films deposited by hot-wire chemical vapour deposition (HWCVD) in the very low temperature range (125-275°C). The doped layers were obtained by the addition of diborane or phosphine in the gas phase during deposition. The incorporation of boron and phosphorus in the films and their influence on the crystalline fraction are studied by secondary ion mass spectrometry and Raman spectroscopy, respectively. Good electrical transport properties were obtained in this deposition regime, with best dark conductivities of 2.6 and 9.8 S cm -1 for the p- and n-doped films, respectively. The effect of the hydrogen dilution and the layer thickness on the electrical properties are also studied. Some technological conclusions referred to cross contamination could be deduced from the nominally undoped samples obtained in the same chamber after p- and n-type heavily doped layers.

Matèries

Silici, Deposició química en fase vapor, Temperatures baixes, Propietats elèctriques, Pel·lícules fines, Energia solar, Transistors, Bor, Fòsfor

Matèries (anglès)

Silicon, Chemical vapor deposition, Low temperatures, Electric properties, Thin films, Solar energy, Transistors, Boron, Phosphorus

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VOZ SÁNCHEZ, Cristóbal, PEIRÓ, D., BERTOMEU I BALAGUERÓ, Joan, SOLER VILAMITJANA, David, FONRODONA TURON, Marta, ANDREU I BATALLÉ, Jordi. Optimisation of doped microcrystalline silicon films deposited at very low temperatures by Hot-Wire CVD. _Materials Science and Engineering B-Solid State Materials for Advanced Technology_. 2000. Vol. 69-70, núm. 278-283. [consulta: 25 de gener de 2026]. ISSN: 0921-5107. [Disponible a: https://hdl.handle.net/2445/47382]

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