Resistive switching properties of SiO2 with embedded Si nanocrystals

Abstract

In this paper, a layer of SiO2 is studied, in hopes of measuring its characteristics, how the resistive switching is produced in this material and how its performance could be improved. A middle ground resistance state has been hinted in our device, which could be used for neuromorphic applications, but attempting to stabilize this state was impossible. Even so, our devices performed well during more than 200 sweeping cycles, and more than 1000 pulse cycles when the maximum electrical current to the device was limited to 100 μA. The low resistance state of our material was maintained for up to two days, proving the state stability. The required voltages for the set and reset states, although high, could be easily lowered by adjusting the thickness of the different layers of our material