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2001

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Please use this identifier to cite or link to this item: https://hdl.handle.net/2445/47378

Stability of hydrogenated nanocrystalline silicon thin-film transistors

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Hydrogenated nanocrystalline silicon thin-films were obtained by catalytic chemical vapour deposition at low substrate temperatures (150°C) and high deposition rates (10 Å/s). These films, with crystalline fractions over 90%, were incorporated as the active layers of bottom-gate thin-film transistors. The initial field-effect mobilities of these devices were over 0.5 cm 2/V s and the threshold voltages lower than 4 V. In this work, we report on the enhanced stability of these devices under prolonged times of gate bias stress compared to amorphous silicon thin-film transistors. Hence, they are promising candidates to be considered in the future for applications such as flat-panel displays.

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http://dx.doi.org/10.1016/S0040-6090(01)01290-1

Subject

Pel·lícules fines, Silici, Nanocristalls, Semiconductors, Catàlisi, Deposició química en fase vapor

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Thin films, Silicon, Nanocrystals, Semiconductors, Catalysis, Chemical vapor deposition

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ORPELLA, Albert, et al. Stability of hydrogenated nanocrystalline silicon thin-film transistors. Thin Solid Films. 2001. Vol. 395, num. 1-2, pags. 334-337. ISSN 0040-6090. [consulted: 9 of October of 2026]. Available at: https://hdl.handle.net/2445/47378

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