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Please use this identifier to cite or link to this item: https://hdl.handle.net/2445/98752
Elastic tunneling charge transport mechanisms in silicon quantum dots / SiO2 thin films and superlattices
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The role of different charge transport mechanisms in Si /SiO2 structures has been studied. A theoretical model based on the Transfer Hamiltonian Formalism has been developed to explain experimental current trends in terms of three different elastic tunneling processes: (1) trap assisted tunneling; (2) transport through an intermediate quantum dot; and (3) direct tunneling between leads. In general, at low fields carrier transport is dominated by the quantum dots whereas, for moderate and high fields, transport through deep traps inherent to the SiO 2 is the most relevant process. Besides, current trends in Si /SiO2 superlattice structure have been properly reproduced.
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ILLERA ROBLES, Sergio, PRADES GARCÍA, Juan Daniel and CIRERA HERNÁNDEZ, Albert. Elastic tunneling charge transport mechanisms in silicon quantum dots / SiO2 thin films and superlattices. Journal of Applied Physics. 2015. Vol. 117, num. 17, pags. 174307. ISSN 0021-8979. [consulted: 5 of October of 2026]. Available at: https://hdl.handle.net/2445/98752