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Please use this identifier to cite or link to this item: https://hdl.handle.net/2445/24102
Design and construction of precision heat fluxmeters
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InAlAs/InGaAs/InP based high electron mobility transistor devices have been structurally and electrically characterized, using transmission electron microscopy and Raman spectroscopy and measuring Hall mobilities. The InGaAs lattice matched channels, with an In molar fraction of 53%, grown at temperatures lower than 530¿°C exhibit alloy decomposition driving an anisotropic InGaAs surface roughness oriented along [1math0]. Conversely, lattice mismatched channels with an In molar fraction of 75% do not present this lateral decomposition but a strain induced roughness, with higher strength as the channel growth temperature increases beyond 490¿°C. In both cases the presence of the roughness implies low and anisotropic Hall mobilities of the two dimensional electron gas.
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JIMÉNEZ FERNÁNDEZ, Justo, ROJAS BLASI, Emilio i ZAMORA CARRANZA, Manuel. Design and construction of precision heat fluxmeters. Journal of Applied Physics. 1984. Vol. 56, núm. 11, pàgs. 3353-3356. ISSN 0021-8979. [consulta: 11 de maig de 2026]. Disponible a: https://hdl.handle.net/2445/24102