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Partial and perfect dislocation nucleation at the onset of stress relaxation in In0.60Ga0.40As active layers of high mobility transistors grown on InP
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The morphology of compressive InxGa1−xAs/In0.52Al0.48As layers grown on (100)‐InP substrates by molecular beam epitaxy was observed by transmission electron microscopy. A preliminary analysis of the network of misfit dislocations at the interface in layers with a thickness of 0.5 μm and xIn between 54% and 63% led to a further study of the onset of stress relaxation for layers with composition xIn=60% and thickness ranging from 5 to 25 nm. A critical thickness was found for plastic relaxation at 20 nm<tc<25 nm. Following a model of excess stress, a mechanism for the nucleation of dislocations according to the sequence 90°partial→60°perfect→30°partial is proposed.
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PEIRÓ MARTÍNEZ, Francisca, CORNET I CALVERAS, Albert and MORANTE I LLEONART, Joan Ramon. Partial and perfect dislocation nucleation at the onset of stress relaxation in In0.60Ga0.40As active layers of high mobility transistors grown on InP. Journal of Applied Physics. 1995. Vol. 77, num. 10, pags. 4993-4996. ISSN 0021-8979. [consulted: 25 of May of 2026]. Available at: https://hdl.handle.net/2445/24742