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Partial and perfect dislocation nucleation at the onset of stress relaxation in In0.60Ga0.40As active layers of high mobility transistors grown on InP
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The morphology of compressive InxGa1−xAs/In0.52Al0.48As layers grown on (100)‐InP substrates by molecular beam epitaxy was observed by transmission electron microscopy. A preliminary analysis of the network of misfit dislocations at the interface in layers with a thickness of 0.5 μm and xIn between 54% and 63% led to a further study of the onset of stress relaxation for layers with composition xIn=60% and thickness ranging from 5 to 25 nm. A critical thickness was found for plastic relaxation at 20 nm<tc<25 nm. Following a model of excess stress, a mechanism for the nucleation of dislocations according to the sequence 90°partial→60°perfect→30°partial is proposed.
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PEIRÓ MARTÍNEZ, Francisca, CORNET I CALVERAS, Albert, MORANTE I LLEONART, Joan ramon. Partial and perfect dislocation nucleation at the onset of stress relaxation in In0.60Ga0.40As active layers of high mobility transistors grown on InP. _Journal of Applied Physics_. 1995. Vol. 77, núm. 10, pàgs. 4993-4996. [consulta: 10 de gener de 2026]. ISSN: 0021-8979. [Disponible a: https://hdl.handle.net/2445/24742]