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Model of single-electron decay from a strongly isolated quantum dot

dc.contributor.authorMartorell Domenech, Juancat
dc.contributor.authorSprung, Donald W. L.cat
dc.contributor.authorMachado, P. A.cat
dc.contributor.authorSmith, C.cat
dc.date.accessioned2009-12-24T10:40:37Z
dc.date.available2009-12-24T10:40:37Z
dc.date.issued2001cat
dc.description.abstractRecent measurements of electron escape from a nonequilibrium charged quantum dot are interpreted within a two-dimensional (2D) separable model. The confining potential is derived from 3D self-consistent Poisson-Thomas-Fermi calculations. It is found that the sequence of decay lifetimes provides a sensitive test of the confining potential and its dependence on electron occupationeng
dc.format.extent8 p.cat
dc.format.mimetypeapplication/pdfeng
dc.identifier.idgrec181572cat
dc.identifier.issn0163-1829cat
dc.identifier.urihttps://hdl.handle.net/2445/10495
dc.language.isoengeng
dc.publisherThe American Physical Societyeng
dc.relation.isformatofReproducció digital del document publicat en format paper, proporcionada per PROLA i http://dx.doi.org/10.1103/PhysRevB.63.045325cat
dc.relation.ispartofPhysical Review B, 2001, vol. 63, núm. 4, p. 045325(1)-045325(8)eng
dc.relation.urihttp://dx.doi.org/10.1103/PhysRevB.63.045325
dc.rights(c) The American Physical Society, 2001
dc.rights.accessRightsinfo:eu-repo/semantics/openAccess
dc.sourceArticles publicats en revistes (Física Quàntica i Astrofísica)
dc.subject.classificationElectronscat
dc.subject.classificationSemiconductorscat
dc.subject.classificationEquacions en derivades parcialscat
dc.subject.otherElectronseng
dc.subject.otherSemiconductorseng
dc.subject.otherPartial differential equationseng
dc.titleModel of single-electron decay from a strongly isolated quantum doteng
dc.typeinfo:eu-repo/semantics/articleeng
dc.typeinfo:eu-repo/semantics/publishedVersion

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