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Please use this identifier to cite or link to this item: https://hdl.handle.net/2445/32211
Blue-green to near-IR switching electroluminescence from Si-rich silicon oxide/nitride bilayer structures
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Blue green to near-IR switching electroluminescence (EL) has been achieved in a metal-oxide-semiconductor light emitting device, where the dielectric has been replaced by a Si-rich silicon oxide/nitride bilayer structure. To form Si nanostructures, the layers were implanted with Si ions at high energy, resulting in a Si excess of 19%, and subsequently annealed at 1000 °C. Transmission electron microscopy and EL studies allowed ascribing the blue-green emission to the Si nitride related defects and the near-IR band with the emission of the Si-nanoclusters embedded into the SiO2 layer. Charge transport analysis is reported and allows for identifying the origin of this twowavelength switching effect.
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BERENCÉN RAMÍREZ, Yonder Antonio, et al. Blue-green to near-IR switching electroluminescence from Si-rich silicon oxide/nitride bilayer structures. Optics Letters. 2011. Vol. 36, num. 14, pags. 2617-2619. ISSN 0146-9592. [consulted: 9 of June of 2026]. Available at: https://hdl.handle.net/2445/32211