Amb motiu del tancament d'estiu, la validació de documents es reprendrà a partir del 28 d'agost de 2026. Disculpeu les molèsties.
Con motivo del cierre de verano, la validación de documentos se reanudará a partir del 28 de agosto de 2026. Disculpad las molestias
Due to the summer closure, document validation will resume starting August 28, 2026. We apologize for any inconvenience.

Files

521835.pdf (153.93 KB)

Document type

Article

Version

Published version

Publication date

2001

All rights reserved

Please use this identifier to cite or link to this item: https://hdl.handle.net/2445/10599

Annealing kinetics of vacancy-related defects in low-dose MeV self-ion-implanted n-type silicon

Journal Title

Authors

Director/Tutor

Journal ISSN

Volume Title

Related resource

http://dx.doi.org/10.1103/PhysRevB.64.195211

Abstract

Silicon samples of n-type have been implanted at room temperature with 5.6-MeV 28Si ions to a dose of 23108 cm22 and then annealed at temperatures from 100 to 380 °C. Both isothermal and isochronal treatments were performed and the annealing kinetics of the prominent divacancy (V2) and vacancy-oxygen ~VO! centers were studied in detail using deep-level transient spectroscopy. The decrease of V2 centers exhibits first-order kinetics in both Czochralski-grown ~CZ! and float-zone ~FZ! samples, and the data provide strong evidence for a process involving migration of V2 and subsequent annihilation at trapping centers. The migration energy extracted for V2 is ;1.3 eV and from the shape of the concentration versus depth profiles, an effective diffusion length <0.1 mm is obtained. The VO center displays a more complex annealing behavior where interaction with mobile hydrogen ~H! plays a key role through the formation of VOH and VOH2 centers. Another contribution is migration of VO and trapping by interstitial oxygen atoms in the silicon lattice, giving rise to vacancy-dioxygen pairs. An activation energy of ;1.8 eV is deduced for the migration of VO, in close resemblance with results from previous studies using electron-irradiated samples. A model for the annealing of VO, involving only three reactions, is put forward and shown to yield a close quantitative agreement with the experimental data for both CZ and FZ samples over the whole temperature range studied.

Subject

Microelectrònica, Dispositius magnètics

Subject (English)

Microelectronics, Magnetic devices

Citation

Collections

Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)

Citation

PELLEGRINO, Paolo, et al. Annealing kinetics of vacancy-related defects in low-dose MeV self-ion-implanted n-type silicon. Physical Review B. 2001. Vol. 64, num. 19, pags. 195211-195221. ISSN 0163-1829. [consulted: 8 of August of 2026]. Available at: https://hdl.handle.net/2445/10599

Export metadata

JSON - METS

Share record