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1994-07-01

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Please use this identifier to cite or link to this item: https://hdl.handle.net/2445/24723

Electrical transport quantum effects in the In0.53Ga0.47As/In0.52Al0.48As heterostructure on silicon

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http://dx.doi.org/10.1063/1.357652

Abstract

Electrical transport in a modulation doped heterostructure of In0.53Ga0.47As/In0.52Al0.48As grown on Si by molecular beam epitaxy has been measured. Quantum Hall effect and Subnikov¿De Haas oscillations were observed indicating the two¿dimensional character of electron transport. A mobility of 20¿000 cm2/V¿s was measured at 6 K for an electron sheet concentration of 1.7×1012 cm¿2. Transmission electron microscopy observations indicated a significant surface roughness and high defect density of the InGaAs/InAlAs layers to be present due to the growth on silicon. In addition, fine¿scale composition modulation present in the In0.53Ga0.47As/In0.52Al0.48As may further limit transport properties.

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Camps magnètics, Nanotecnologia

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Magnetic fields, Nanotechnology

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Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)

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GEORGAKILAS, Alexander, et al. Electrical transport quantum effects in the In0.53Ga0.47As/In0.52Al0.48As heterostructure on silicon. Journal of Applied Physics. 1994. Vol. 76, num. 3, pags. 1948-1950. ISSN 0021-8979. [consulted: 17 of June of 2026]. Available at: https://hdl.handle.net/2445/24723

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