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Article

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Published version

Publication date

2001

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Please use this identifier to cite or link to this item: https://hdl.handle.net/2445/12801

Dissociation of vertical semiconductor diatomic artificial molecules

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http://dx.doi.org/10.1103/PhysRevLett.87.066801

Abstract

We investigate the dissociation of few-electron circular vertical semiconductor double quantum dot artificial molecules at 0 T as a function of interdot distance. A slight mismatch introduced in the fabrication of the artificial molecules from nominally identical constituent quantum wells induces localization by offsetting the energy levels in the quantum dots by up to 2 meV, and this plays a crucial role in the appearance of the addition energy spectra as a function of coupling strength particularly in the weak coupling limit.

Subject

Estructura electrònica, Macromolècules, Ciència dels materials

Subject (English)

Electronic structure, Macromolecules, Materials science

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Articles publicats en revistes (Física Quàntica i Astrofísica)

Citation

PI PERICAY, Martí, et al. Dissociation of vertical semiconductor diatomic artificial molecules. Physical Review Letters. 2001. Vol. 87, num. 6, pags. 066801-1-066801-4. ISSN 0031-9007. [consulted: 17 of August of 2026]. Available at: https://hdl.handle.net/2445/12801

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