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Ni-Mn-Ga thin films produced by pulsed laser deposition
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Polycrystalline Ni-Mn-Ga thin films have been deposited by the pulsed laser deposition (PLD) technique, using slices of a Ni-Mn-Ga single crystal as targets and onto Si (100) substrates at temperatures ranging from 673 K up to 973 K. Off-stoichiometry thin films were deposited at a base pressure of 1×10-6-Torr or in a 5 mTorr Ar atmosphere. Samples deposited in vacuum and temperatures above 823 K are magnetic at room temperature and show the austenitic {220} reflection in their x-ray diffraction patterns. The temperature dependences of both electrical resistance and magnetic susceptibility suggest that these samples exhibit a structural martensitic transition at around 260 K. The magnetoresistance ratio at low temperature can be as high as 1.3%, suggesting the existence of a granular structure in the films
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TELLO, P. g., CASTAÑO, F. j., O'HANDLEY, Robert c., ALLEN, Samuel m., ESTEVE, M., LABARTA, Amílcar, BATLLE GELABERT, Xavier. Ni-Mn-Ga thin films produced by pulsed laser deposition. _Journal of Applied Physics_. 2002. Vol. 91, núm. 10, pàgs. 8234-8236. [consulta: 23 de gener de 2026]. ISSN: 0021-8979. [Disponible a: https://hdl.handle.net/2445/22088]