Files
Document type
ArticleVersion
Published versionPublication date
All rights reserved
Please use this identifier to cite or link to this item: https://hdl.handle.net/2445/24745
Structure of 60° dislocations at the GaAs/Si interface
Journal Title
Director/Tutor
Journal ISSN
Volume Title
Related resource
Abstract
High‐resolution electron microscopy technique has been applied to a detailed study of the 60° dislocations at the atomic layer molecular‐beam‐epitaxial GaAs/Si interface. Their deformation fields strongly interact with neighbor dislocations inducing irregular spacing between the cores and possible dissociations. Biatomic silicon steps were observed at the interface, but never inside 60° dislocation cores. Computer image simulation and elasticity calculations of the atomic displacement field have been used in order to determine the structure of the 60° dislocation; however, due to the Eshelby effect and to interaction with some neighbor dislocations, in many cases no theoreticalmodel could explain some observations.
Subject (English)
Citation
Citation
VILÀ I ARBONÈS, Anna Maria, et al. Structure of 60° dislocations at the GaAs/Si interface. Journal of Applied Physics. 1996. Vol. 79, num. 2, pags. 676-681. ISSN 0021-8979. [consulted: 12 of June of 2026]. Available at: https://hdl.handle.net/2445/24745