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Structure of 60° dislocations at the GaAs/Si interface
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High‐resolution electron microscopy technique has been applied to a detailed study of the 60° dislocations at the atomic layer molecular‐beam‐epitaxial GaAs/Si interface. Their deformation fields strongly interact with neighbor dislocations inducing irregular spacing between the cores and possible dissociations. Biatomic silicon steps were observed at the interface, but never inside 60° dislocation cores. Computer image simulation and elasticity calculations of the atomic displacement field have been used in order to determine the structure of the 60° dislocation; however, due to the Eshelby effect and to interaction with some neighbor dislocations, in many cases no theoreticalmodel could explain some observations.
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VILÀ I ARBONÈS, Anna Maria, et al. Structure of 60° dislocations at the GaAs/Si interface. Journal of Applied Physics. 1996. Vol. 79, num. 2, pags. 676-681. ISSN 0021-8979. [consulted: 9 of June of 2026]. Available at: https://hdl.handle.net/2445/24745