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2003

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Please use this identifier to cite or link to this item: https://hdl.handle.net/2445/47371

Shutterless deposition of phosphorous doped microcrystalline silicon by Cat-CVD

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http://dx.doi.org/10.1016/S0040-6090(03)00101-9

Abstract

In this paper we present results on phosphorous-doped μc-Si:H by catalytic chemical vapour deposition in a reactor with an internal arrangement that does not include a shutter. An incubation phase of around 20 nm seems to be the result of the uncontrolled conditions that take place during the first stages of deposition. The optimal deposition conditions found lead to a material with a dark conductivity of 12.8 S/cm, an activation energy of 0.026 eV and a crystalline fraction of 0.86. These values make the layers suitable to be implemented in solar cells.

Subject

Silici, Catàlisi, Deposició química en fase vapor, Fòsfor, Cristalls, Cèl·lules solars, Pel·lícules fines

Subject (English)

Silicon, Catalysis, Chemical vapor deposition, Phosphorus, Crystals, Solar cells, Thin films

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Articles publicats en revistes (Física Aplicada)

Citation

FONRODONA TURON, Marta, et al. Shutterless deposition of phosphorous doped microcrystalline silicon by Cat-CVD. Thin Solid Films. 2003. Vol. 430, num. 1-2, pags. 145-148. ISSN 0040-6090. [consulted: 7 of June of 2026]. Available at: https://hdl.handle.net/2445/47371

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