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1999-04-15

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Please use this identifier to cite or link to this item: https://hdl.handle.net/2445/24789

Tunable epitaxial growth of magnetoresistive La2/3Sr1/3MnO3 thin films

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http://dx.doi.org/10.1063/1.370486

Abstract

We report on the growth of epitaxial La2/3Sr1/3MnO3 thin films on buffered Si(001) substrates. We show that a suitable choice of the buffer heterostructure allows one to obtain epitaxial (00h), (0hh), and (hhh) manganite thin films. The magnetotransport properties are investigated and we have found that the low-field magnetoresistance is directly related to the width of the normal-to-plane rocking curves, irrespective of the film orientation. The magnetic anisotropy of these films has also been determined.

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Pel·lícules fines, Anisotropia, Magnetisme, Làsers

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Thin films, Anisotropy, Magnetism, Lasers

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FONTCUBERTA I GRIÑÓ, Josep, et al. Tunable epitaxial growth of magnetoresistive La2/3Sr1/3MnO3 thin films. Journal of Applied Physics. 1999. Vol. 85, num. 8, pags. 4800-4802. ISSN 0021-8979. [consulted: 18 of June of 2026]. Available at: https://hdl.handle.net/2445/24789

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