Files
Document type
ArticleVersion
Published versionPublication date
All rights reserved
Please use this identifier to cite or link to this item: https://hdl.handle.net/2445/48250
Nanoparticles in SiH4-Ar plasma: Modelling and comparison with experimental data
Journal Title
Director/Tutor
Journal ISSN
Volume Title
Related resource
Abstract
Experimental and theoretical investigations for growth of silicon nanoparticles (4 to 14 nm) in radio frequency discharge were carried out. Growth processes were performed with gas mixtures of SiH4 and Ar in a plasma chemical reactor at low pressure. A distinctive feature of presented kinetic model of generation and growth of nanoparticles (compared to our earlier model) is its ability to investigate small"critical" dimensions of clusters, determining the rate of particle production and taking into account the influence of SiH2 and Si2Hm dimer radicals. The experiments in the present study were extended to high pressure (≥20 Pa) and discharge power (≥40 W). Model calculations were compared to experimental measurements, investigating the dimension of silicon nanoparticles as a function of time, discharge power, gas mixture, total pressure, and gas flow.
Subject (English)
Citation
Citation
GORDIETS, B. F., et al. Nanoparticles in SiH4-Ar plasma: Modelling and comparison with experimental data. Journal of Applied Physics. 2011. Vol. 110, num. 103302-1-103302-8. ISSN 0021-8979. [consulted: 10 of June of 2026]. Available at: https://hdl.handle.net/2445/48250