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2019-10-08

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Si us plau utilitzeu sempre aquest identificador per citar o enllaçar aquest document: https://hdl.handle.net/2445/143837

Silicon nanocrystals-based electroluminescent resistive switching device

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https://doi.org/10.1063/1.5119299

Resum

In the last few years, the emergence of studies concerning the resistive switching (RS) phenomenon has resulted in the finding of a large amount of materials being capable of acting as an active layer in such devices, i.e., the layer where the change in resistance takes place. Whereas the normal operation consists of the electrical readout of the modified resistance state of the device after electrical writing, electro-photonic approaches seek the involvement of light in these devices, be it either for the active Set or Reset operations or the readout. We propose in this work silicon nanocrystal multilayers (Si NC MLs) as an active material for being used in RS devices, taking advantage of their outstanding optical properties. The resistance states of Si NC MLs were obtained by electrical excitation, whose readout is carried out by electrical and electro-optical means, thanks to a distinguishable electroluminescence emission under each state. To achieve this, we report on an adequate design that combines both the Si NC MLs with ZnO as a transparent conductive oxide, whose material properties ensure the device RS performance while allowing the electro-optical characterization. Overall, such an occurrence states the demonstration of a Si NCs-based electroluminescent RS device, which paves the way for their future integration into photonic integrated circuits.

Matèries

Nanocristalls, Silici, Díodes electroluminescents

Matèries (anglès)

Nanocrystals, Silicon, Light emitting diodes

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Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)

Citació

FRIEIRO CASTRO, Juan luis, LÓPEZ VIDRIER, Julià, BLÁZQUEZ GÓMEZ, Josep oriol, YAZICIOGLU, D., GUTSCH, S., VALENTA, Jan, HERNÁNDEZ MÁRQUEZ, Sergi, ZACHARIAS, Margit, GARRIDO FERNÁNDEZ, Blas. Silicon nanocrystals-based electroluminescent resistive switching device. _Journal of Applied Physics_. 2019. Vol. 126, núm. 144501. [consulta: 14 de gener de 2026]. ISSN: 0021-8979. [Disponible a: https://hdl.handle.net/2445/143837]

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