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114374.pdf (9.15 MB)

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1994

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Si us plau utilitzeu sempre aquest identificador per citar o enllaçar aquest document: https://hdl.handle.net/2445/98753

Polycrystalline silicon films obtained by hot-wire chemical vapour deposition

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http://dx.doi.org/10.1007/BF00331926

Resum

Silicon films were deposited at moderate substrate temperatures (280-500° C) from pure silane and a silane-hydrogen mixture (10% SiH 4, 90% H 2) in a hotwire CVD reactor. The morphology, structure and composition of the samples were studied with scanning electron microscopy, transmission electron microscopy, transmission electron diffraction, X-ray diffraction, Raman spectroscopy and secondary ion mass spectrometry. The sample deposited at 500° C with pure silane has an amorphous structure, whereas the samples obtained from silane diluted in hydrogen have a polycrystalline structure, even that grown at the lowest temperature (280° C). Polycrystalline samples have a columnar structure with 0.3-1 ?m crystallite sizes with preferential orientation in [220] direction. Deposition rates depend on the filament-substrate distance and range from 9.5 to 37 Å/s for the polycrystalline samples. The high quality of the polycrystalline samples obtained makes the hot-wire technique very promising. Moreover, it is expected to be easily scaled up for applications to large-area optoelectronic devices and to photovoltaic solar cells.

Matèries

Pel·lícules fines, Silici, Deposició en fase de vapor

Matèries (anglès)

Thin films, Silicon, Vapor-plating

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Articles publicats en revistes (Física Aplicada)

Citació

CIFRE, J., et al. Polycrystalline silicon films obtained by hot-wire chemical vapour deposition. Applied Physics A: Materials Science and Processing . 1994. Vol. 59, num. 6, pags. 645-651. ISSN 0947-8396. [consulted: 17 of August of 2026]. Available at: https://hdl.handle.net/2445/98753

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