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Metal-Nitride-oxide-semiconductor light-emitting devices for general lighting.
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The potential for application of silicon nitride-based light sources to general lighting is reported. The mechanism of current injection and transport in silicon nitride layers and silicon oxide tunnel layers is determined by electro-optical characterization of both bi- and tri-layers. It is shown that red luminescence is due to bipolar injection by direct tunneling, whereas Poole-Frenkel ionization is responsible for blue-green emission. The emission appears warm white to the eye, and the technology has potential for large-area lighting devices. A photometric study, including color rendering, color quality and luminous efficacy of radiation, measured under various AC excitation conditions, is given for a spectrum deemed promising for lighting. A correlated color temperature of 4800K was obtained using a 35% duty cycle of the AC excitation signal. Under these conditions, values for general color rendering index of 93 and luminous efficacy of radiation of 112 lm/W are demonstrated. This proof of concept demonstrates that mature silicon technology, which is extendable to lowcost, large-area lamps, can be used for general lighting purposes. Once the external quantum efficiency is improved to exceed 10%, this technique could be competitive with other energy-efficient solid-state lighting options. ©2011 Optical Society of America OCIS codes: (230.2090) Electro-optical devices; (150.2950) Illumination.
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BERENCÉN RAMÍREZ, Yonder antonio, CARRERAS, Josep, JAMBOIS, Olivier, RAMÍREZ RAMÍREZ, Joan manel, RODRÍGUEZ, J. a., DOMÍNGUEZ, Carlos (domínguez horna), HUNT, Charles e., GARRIDO FERNÁNDEZ, Blas. Metal-Nitride-oxide-semiconductor light-emitting devices for general lighting.. _Optics Express_. 2011. Vol. 19, núm. S3, pàgs. A234-A244. [consulta: 14 de gener de 2026]. ISSN: 1094-4087. [Disponible a: https://hdl.handle.net/2445/32210]