Fitxers
Tipus de document
ArticleVersió
Versió publicadaData de publicació
Tots els drets reservats
Si us plau utilitzeu sempre aquest identificador per citar o enllaçar aquest document: https://hdl.handle.net/2445/9851
Equilibrium and nonequilibrium gap-state distribution in amorphous silicon
Títol de la revista
Director/Tutor
ISSN de la revista
Títol del volum
Recurs relacionat
Resum
A general and straightforward analytical expression for the defect-state-energy distribution of a-Si:H is obtained through a statistical-mechanical treatment of the hydrogen occupation for different sites. Broadening of available defect energy levels (defect pool) and their charge state, both in electronic equilibrium and nonequilibrium steady-state situations, are considered. The model gives quantitative results that reproduce different defect phenomena, such as the thermally activated spin density, the gap-state dependence on the Fermi level, and the intensity and temperature dependence of light-induced spin density. An interpretation of the Staebler-Wronski effect is proposed, based on the ''conversion'' of shallow charged centers to neutrals near the middle of the gap as a consequence of hydrogen redistribution.
Matèries (anglès)
Citació
Col·leccions
Citació
ASENSI LÓPEZ, José Miguel i ANDREU I BATALLÉ, Jordi. Equilibrium and nonequilibrium gap-state distribution in amorphous silicon. Physical Review B. 1993. Vol. 47, núm. 20, pàgs. 13295-13303. ISSN 0163-1829. [consulta: 8 de maig de 2026]. Disponible a: https://hdl.handle.net/2445/9851