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1993

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Si us plau utilitzeu sempre aquest identificador per citar o enllaçar aquest document: https://hdl.handle.net/2445/9851

Equilibrium and nonequilibrium gap-state distribution in amorphous silicon

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Recurs relacionat

http://dx.doi.org/10.1103/PhysRevB.47.13295

Resum

A general and straightforward analytical expression for the defect-state-energy distribution of a-Si:H is obtained through a statistical-mechanical treatment of the hydrogen occupation for different sites. Broadening of available defect energy levels (defect pool) and their charge state, both in electronic equilibrium and nonequilibrium steady-state situations, are considered. The model gives quantitative results that reproduce different defect phenomena, such as the thermally activated spin density, the gap-state dependence on the Fermi level, and the intensity and temperature dependence of light-induced spin density. An interpretation of the Staebler-Wronski effect is proposed, based on the ''conversion'' of shallow charged centers to neutrals near the middle of the gap as a consequence of hydrogen redistribution.

Matèries

Conductivitat elèctrica, Propietats tèrmiques, Semiconductors amorfs

Matèries (anglès)

Electric conductivity, Thermal properties, Amorphous semiconductors

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Articles publicats en revistes (Física Aplicada)

Citació

ASENSI LÓPEZ, José Miguel and ANDREU I BATALLÉ, Jordi. Equilibrium and nonequilibrium gap-state distribution in amorphous silicon. Physical Review B. 1993. Vol. 47, num. 20, pags. 13295-13303. ISSN 0163-1829. [consulted: 26 of June of 2026]. Available at: https://hdl.handle.net/2445/9851

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