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2011

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Please use this identifier to cite or link to this item: https://hdl.handle.net/2445/34663

The Electronic Structure of Co-Sputtered Zinc Indium Tin Oxide Thin Films

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http://dx.doi.org/10.1063/1.3647780

Abstract

Zinc indium tin oxide (ZITO) transparent conductive oxide layers were deposited via radio frequency (RF) magnetron co-sputtering at room temperature. A series of samples with gradually varying zinc content was investigated. The samples were characterized with x-ray and ultraviolet photoemission spectroscopy (XPS, UPS) to determine the electronic structure of the surface. Valence and conduction bands maxima (VBM, CBM), and work function were determined. The experiments indicate that increasing Zn content results in films with a higher defect rate at the surface leading to the formation of a degenerately doped surface layer if the Zn content surpasses 50%. Furthermore, the experiments demonstrate that ZITO is susceptible to ultraviolet light induced work function reduction, similar to what was earlier observed on ITO and TiO2 films.

Subject

Òxid de zinc, Estany, Òxids metàl·lics, Elèctrodes, Estructura electrònica, Propietats òptiques, Pel·lícules fines

Subject (English)

Zinc oxide, Tin, Metallic oxides, Electrodes, Electronic structure, Optical properties, Thin films

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CARRERAS SEGUÍ, Paz, et al. The Electronic Structure of Co-Sputtered Zinc Indium Tin Oxide Thin Films. Journal of Applied Physics. 2011. Vol. 110, num. 7, pags. 073711-1-073711-7. ISSN 0021-8979. [consulted: 11 of August of 2026]. Available at: https://hdl.handle.net/2445/34663

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