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Vacancy-assisted domain-growth in asymmetric binary alloys: A Monte Carlo Study

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A Monte Carlo simulation study of the vacancy-assisted domain growth in asymmetric binary alloys is presented. The system is modeled using a three-state ABV Hamiltonian which includes an asymmetry term. Our simulated system is a stoichiometric two-dimensional binary alloy with a single vacancy which evolves according to the vacancy-atom exchange mechanism. We obtain that, compared to the symmetric case, the ordering process slows down dramatically. Concerning the asymptotic behavior it is algebraic and characterized by the Allen-Cahn growth exponent x51/2. The late stages of the evolution are preceded by a transient regime strongly affected by both the temperature and the degree of asymmetry of the alloy. The results are discussed and compared to those obtained for the symmetric case.

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PORTA TENA, Marcel, VIVES I SANTA-EULÀLIA, Eduard and CASTÁN I VIDAL, Maria Teresa. Vacancy-assisted domain-growth in asymmetric binary alloys: A Monte Carlo Study. Physical Review B. 1999. Vol. 60, num. 6, pags. 3920-3927. ISSN 0163-1829. [consulted: 3 of August of 2026]. Available at: https://hdl.handle.net/2445/10476

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