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1993

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Please use this identifier to cite or link to this item: https://hdl.handle.net/2445/47603

Structure of a-Si:H/a-Si1-xCx:H multilayers deposited in a reactor with automated substrate holder

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http://dx.doi.org/10.1016/0042-207X(93)90361-D

Abstract

This paper deals with the structural properties of a-Si:H/a-Si1-xCx: H multilayers deposited by glow-discharge decomposition of SiH4 and SiH4 and CH4 mixtures. The main feature of the rf plasma reactor is an automated substrate holder. The plasma stabilization time and its influence on the multilayer obtained is discussed. A series of a-Si:H/a-Si1-xCx: H multilayers has been deposited and characterized by secondary ion mass spectrometry (SIMS), X-ray diffraction (XRD) and transmission electron microscopy (TEM). No asymmetry between the two types of interface has been observed. The results show that the multilayers present a very good periodicity and low roughness. The difficulty of determining the abruptness of the multilayer at the nanometer scale is discussed.

Subject

Silici, Semiconductors amorfs, Cèl·lules solars, Pel·lícules fines, Transistors, Nanotecnologia, Deposició química en fase vapor

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Silicon, Amorphous semiconductors, Solar cells, Thin films, Transistors, Nanotechnology, Chemical vapor deposition

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BERTOMEU I BALAGUERÓ, Joan, et al. Structure of a-Si:H/a-Si1-xCx:H multilayers deposited in a reactor with automated substrate holder. Vacuum. 1993. Vol. 44, num. 2, pags. 129-134. ISSN 0042-207X. [consulted: 7 of June of 2026]. Available at: https://hdl.handle.net/2445/47603

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