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Low-loss rib waveguides containing Si nanocrystals embedded in SiO2
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We report on the study and modeling of the structural and optical properties of rib-loaded waveguides working in the 600-900-nm spectral range. A Si nanocrystal (Si-nc) rich SiO2 layer with nominal Si excess ranging from 10% to 20% was produced by quadrupole ion implantation of Si into thermal SiO2 formed on a silicon substrate. Si-ncs were precipitated by annealing at 1100°C, forming a 0.4-um-thick core layer in the waveguide. The Si content, the Si-nc density and size, the Si-nc emission, and the active layer effective refractive index were determined by dedicated experiments using x-ray photoelectron spectroscopy, Raman spectroscopy, energy-filtered transmission electron microscopy, photoluminescence and m-lines spectroscopy. Rib-loaded waveguides were fabricated by photolithographic and reactive ion etching processes, with patterned rib widths ranging from 1¿to¿8¿¿m. Light propagation in the waveguide was observed and losses of 11dB/cm at 633 and 780 nm were measured, modeled and interpreted.
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PELLEGRINO, Paolo, et al. Low-loss rib waveguides containing Si nanocrystals embedded in SiO2. Journal of Applied Physics. 2005. Vol. 97, num. 7, pags. 074312/1-074312/8. ISSN 0021-8979. [consulted: 19 of August of 2026]. Available at: https://hdl.handle.net/2445/24824