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1999

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Si us plau utilitzeu sempre aquest identificador per citar o enllaçar aquest document: https://hdl.handle.net/2445/8722

Hydrogen-induced piezoelectric effects in InP HEMT's

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Recurs relacionat

http://dx.doi.org/10.1109/55.778153

Resum

In this letter, we have investigated hydrogen degradation of InP HEMT's with Ti/Pt/Au gates. We have found that V/sub T/ shifts negative after exposure to hydrogen, and exhibits an L/sub G/ and orientation dependence. We postulate that /spl Delta/V/sub T/ is at least in part due to the piezoelectric effect. Hydrogen exposure leads to the formation of TiH/sub x/, producing compressive stress in the gate. This stress induces a piezoelectric charge distribution in the semiconductor that shifts the threshold voltage. We have independently confirmed TiH/sub x/ formation under our experimental conditions through Auger measurements. Separate radius-of-curvature measurements have also independently confirmed that Ti/Pt films become compressively stressed relative to their initial state after H/sub 2/ exposure.

Matèries

Piroelectricitat i piezoelectricitat, Hidrogenació

Matèries (anglès)

Hydrogenation, Piezoelectricity, Semiconductor device, InP HEMT's

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Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)

Citació

BLANCHARD, Roxann R., et al. Hydrogen-induced piezoelectric effects in InP HEMT's. IEEE Electron Device Letters. 1999. Vol. 20, num. 8, pags. 393-395. ISSN 0741-3106. [consulted: 22 of May of 2026]. Available at: https://hdl.handle.net/2445/8722

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