Document type
ArticleVersion
Published versionPublication date
All rights reserved
Please use this identifier to cite or link to this item: https://hdl.handle.net/2445/32222
Fine speckle contrast in InGaAs/InP systems: Influence of layer thickness, missmatch, and growing temperature
Journal Title
Director/Tutor
Additional contribution
Journal ISSN
Volume Title
Abstract
This work is focused on the study of the fine speckle contrast present in planar view observations of matched and mismatched InGaAs layers grown by molecular beam epitaxy on InP substrates. Our results provide experimental evidence of the evolution of this fine structure with the mismatch, layer thickness, and growth temperature. The correlation of the influence of all these parameters on the appearance of the contrast modulation points to the development of the fine structure during the growth. Moreover, as growth proceeds, this structure shows a dynamic behavior which depends on the intrinsic layer substrate stress.
Related resource
Subject (English)
Citation
Citation
PEIRÓ MARTÍNEZ, Francisca, et al. Fine speckle contrast in InGaAs/InP systems: Influence of layer thickness, missmatch, and growing temperature. Journal of Applied Physics. 1993. Vol. 73, num. 9, pags. 4319-4323. ISSN 0021-8979. [consulted: 15 of October of 2026]. Available at: https://hdl.handle.net/2445/32222