Carregant...
Fitxers
Tipus de document
ArticleVersió
Versió publicadaData de publicació
Tots els drets reservats
Si us plau utilitzeu sempre aquest identificador per citar o enllaçar aquest document: https://hdl.handle.net/2445/24864
Size dependence of refractive index of Si nanoclusters embedded in SiO2
Títol de la revista
Director/Tutor
ISSN de la revista
Títol del volum
Recurs relacionat
Resum
he complex refractive index of SiO2 layers containing Si nanoclusters (Si-nc) has been measured by spectroscopic ellipsometry in the range from 1.5 to 5.0 eV. It has been correlated with the amount of Si excess accurately measured by x-ray photoelectron spectroscopy and the nanocluster size determined by energy-filtered transmission electron microscopy. The Si-nc embedded in SiO2 have been produced by a fourfold Si+ ion implantation, providing uniform Si excess aimed at a reliable ellipsometric modeling. The complex refractive index of the Si-nc phase has been calculated by the application of the Bruggeman effective-medium approximation to the composite media. The characteristic resonances of the refractive index and extinction coefficient of bulk Si vanish out in Si-nc. In agreement with theoretical simulations, a significant reduction of the refractive index of Si-nc is observed, in comparison with bulk and amorphous silicon. The knowledge of the optical properties of these composite layers is crucial for the realization of Si-based waveguides and light-emitting devices.
Matèries (anglès)
Citació
Citació
MORENO PASTOR, José antonio, GARRIDO FERNÁNDEZ, Blas, PELLEGRINO, Paolo, GARCÍA FAVROT, Cristina, ARBIOL I COBOS, Jordi, MORANTE I LLEONART, Joan ramon, MARIE, P., GOURBILLEAU, Fabrice, RIZK, Richard. Size dependence of refractive index of Si nanoclusters embedded in SiO2. _Journal of Applied Physics_. 2005. Vol. 98, núm. 1, pàgs. 013523-013526. [consulta: 21 de gener de 2026]. ISSN: 0021-8979. [Disponible a: https://hdl.handle.net/2445/24864]