Influence of a gold seed in transparent V<sub>2</sub>O<sub>x</sub>/Ag/V<sub>2</sub>O<sub>x</sub> selective contacts for dopant-free silicon solar cells

dc.contributor.authorNguyen, Hieu Trung
dc.contributor.authorRos Costals, Eloi
dc.contributor.authorTom, Thomas
dc.contributor.authorBertomeu i Balagueró, Joan
dc.contributor.authorAsensi López, José Miguel
dc.contributor.authorAndreu i Batallé, Jordi
dc.contributor.authorMartin Garcia, Isidro
dc.contributor.authorOrtega Villasclaras, Pablo Rafael
dc.contributor.authorGarin Escriva, Moises
dc.contributor.authorPuigdollers i González, Joaquim
dc.contributor.authorVoz Sánchez, Cristóbal
dc.contributor.authorAlcubilla González, Ramón
dc.date.accessioned2019-01-08T09:17:20Z
dc.date.available2019-01-08T09:17:20Z
dc.date.issued2018-11-02
dc.date.updated2019-01-08T09:17:20Z
dc.description.abstractDielectric/metal/dielectric structures based on vanadium pentoxide with a thin silver interlayer have been optimized to replace traditional transparent electrodes. As would be expected, there is a trade-off in the metal thickness to achieve simultaneously high transparency and low sheet resistance. It has been demonstrated that an ultrathin gold seed prevents the tendency of silver to form clusters. This wetting effect reduces the metal thickness needed to form a continuous film, which leads to a higher averaged transmittance and very low sheet resistance. On the other hand, vanadium pentoxide on silicon forms a high quality hole-selective contact. Thus, these structures can be used as an all-in-one transparent electrode and selective contact for a new kind of heterojunction solar cells. This concept has been proved in a 13.3% efficient solar cell fabricated on n-type silicon wafers. Besides dopant-free, the complete fabrication route did not require any sputtered transparent electrode.
dc.format.extent7 p.
dc.format.mimetypeapplication/pdf
dc.identifier.idgrec682415
dc.identifier.issn2156-3381
dc.identifier.urihttps://hdl.handle.net/2445/127122
dc.language.isoeng
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)
dc.relation.isformatofVersió postprint del document publicat a: https://doi.org/10.1109/JPHOTOV.2018.2875876
dc.relation.ispartofIEEE Journal of Photovoltaics, 2018, vol. 9, num. 1, p. 72-77
dc.relation.urihttps://doi.org/10.1109/JPHOTOV.2018.2875876
dc.rights(c) Institute of Electrical and Electronics Engineers (IEEE), 2018
dc.rights.accessRightsinfo:eu-repo/semantics/openAccess
dc.sourceArticles publicats en revistes (Física Aplicada)
dc.subject.classificationCèl·lules solars
dc.subject.classificationCèl·lules fotovoltaiques
dc.subject.classificationSilici
dc.subject.classificationConductivitat elèctrica
dc.subject.otherSolar cells
dc.subject.otherPhotovoltaic cells
dc.subject.otherSilicon
dc.subject.otherElectric conductivity
dc.titleInfluence of a gold seed in transparent V<sub>2</sub>O<sub>x</sub>/Ag/V<sub>2</sub>O<sub>x</sub> selective contacts for dopant-free silicon solar cells
dc.typeinfo:eu-repo/semantics/article
dc.typeinfo:eu-repo/semantics/acceptedVersion

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