Fitxers
Tipus de document
ArticleVersió
Versió acceptadaData de publicació
Tots els drets reservats
Si us plau utilitzeu sempre aquest identificador per citar o enllaçar aquest document: https://hdl.handle.net/2445/47285
Progress in a-Si:H/c-Si heterojunction emitters obtained by Hot-Wire CVD at 200°C
Títol de la revista
Director/Tutor
ISSN de la revista
Títol del volum
Recurs relacionat
Resum
In this work, we investigate heterojunction emitters deposited by Hot-Wire CVD on p-type crystalline silicon. The emitter structure consists of an n-doped film (20 nm) combined with a thin intrinsic hydrogenated amorphous silicon buffer layer (5 nm). The microstructure of these films has been studied by spectroscopic ellipsometry in the UV-visible range. These measurements reveal that the microstructure of the n-doped film is strongly influenced by the amorphous silicon buffer. The Quasy-Steady-State Photoconductance (QSS-PC) technique allows us to estimate implicit open-circuit voltages near 700 mV for heterojunction emitters on p-type (0.8 Ω·cm) FZ silicon wafers. Finally, 1 cm 2 heterojunction solar cells with 15.4% conversion efficiencies (total area) have been fabricated on flat p-type (14 Ω·cm) CZ silicon wafers with aluminum back-surface-field contact.
Matèries (anglès)
Citació
Col·leccions
Citació
MUÑOZ RAMOS, David, et al. Progress in a-Si:H/c-Si heterojunction emitters obtained by Hot-Wire CVD at 200°C. Thin Solid Films. 2008. Vol. 516, num. 5, pags. 761-764. ISSN 0040-6090. [consulted: 22 of May of 2026]. Available at: https://hdl.handle.net/2445/47285