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2011

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Please use this identifier to cite or link to this item: https://hdl.handle.net/2445/47153

Hot wire configuration for depositing device grade nano-crystalline silicon at high deposition rate

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http://dx.doi.org/10.1016/j.tsf.2011.01.296

Abstract

The University of Barcelona is developing a pilot-scale hot wire chemical vapor deposition (HW-CVD) set up for the deposition of nano-crystalline silicon (nc-Si:H) on 10 cm × 10 cm glass substrate at high deposition rate. The system manages 12 thin wires of 0.15-0.2 mm diameter in a very dense configuration. This permits depositing very uniform films, with inhomogeneities lower than 2.5%, at high deposition rate (1.5-3 nm/s), and maintaining the substrate temperature relatively low (250 °C). The wire configuration design, based on radicals' diffusion simulation, is exposed and the predicted homogeneity is validated with optical transmission scanning measurements of the deposited samples. Different deposition series were carried out by varying the substrate temperature, the silane to hydrogen dilution and the deposition pressure. By means of Fourier transform infrared spectroscopy (FTIR), the evolution in time of the nc-Si:H vibrational modes was monitored. Particular importance has been given to the study of the material stability against post-deposition oxidation.

Subject

Nanoestructures, Deposició química en fase vapor, Espectroscòpia d'infraroigs per transformada de Fourier, Oxidació, Cèl·lules solars, Pel·lícules fines, Optoelectrònica

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Nanostructures, Chemical vapor deposition, Fourier transform infrared spectroscopy, Oxidation, Solar cells, Thin films, Optoelectronics

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NOS AGUILÀ, Oriol, FRIGERI, Paolo Antonio and BERTOMEU I BALAGUERÓ, Joan. Hot wire configuration for depositing device grade nano-crystalline silicon at high deposition rate. Thin Solid Films. 2011. Vol. 519, num. 14, pags. 4531-4534. ISSN 0040-6090. [consulted: 11 of August of 2026]. Available at: https://hdl.handle.net/2445/47153

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