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2006

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Please use this identifier to cite or link to this item: https://hdl.handle.net/2445/47298

Low temperature amorphous and nanocrystalline silicon thin film transistors deposited by Hot-Wire CVD on glass substrate

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http://dx.doi.org/10.1016/j.tsf.2005.07.217

Abstract

Amorphous and nanocrystalline silicon films obtained by Hot-Wire Chemical Vapor Deposition have been incorporated as active layers in n-type coplanar top gate thin film transistors deposited on glass substrates covered with SiO 2. Amorphous silicon devices exhibited mobility values of 1.3 cm 2 V - 1 s - 1, which are very high taking into account the amorphous nature of the material. Nanocrystalline transistors presented mobility values as high as 11.5 cm 2 V - 1 s - 1 and resulted in low threshold voltage shift (∼ 0.5 V).

Subject

Transistors, Pel·lícules fines, Silici, Nanocristalls, Deposició química en fase vapor

Subject (English)

Transistors, Thin films, Silicon, Nanocrystals, Chemical vapor deposition

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Citation

FONRODONA TURON, Marta, et al. Low temperature amorphous and nanocrystalline silicon thin film transistors deposited by Hot-Wire CVD on glass substrate. Thin Solid Films. 2006. Vol. 501, num. 1-2, pags. 303-306. ISSN 0040-6090. [consulted: 18 of August of 2026]. Available at: https://hdl.handle.net/2445/47298

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