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Silicon nanocluster sensitization of erbium ions under low-energy optical excitation
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The sensitizing action of amorphous silicon nanoclusters on erbium ions in thin silica films has been studied under low-energy (long wavelength) optical excitation. Profound differences in fast visible and infrared emission dynamics have been found with respect to the high-energy (short
wavelength) case. These findings point out to a strong dependence of the energy transfer process on the optical excitation energy. Total inhibition of energy transfer to erbium states higher than the
first excited state (4I13/2) has been demonstrated for excitation energy below 1.82 eV (excitation wavelength longer than 680 nm). Direct excitation of erbium ions to the first excited state (4I13/2)
has been confirmed to be the dominant energy transfer mechanism over the whole spectral range of optical excitation used (540 nm¿680 nm).
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PRTLJAGA, Nikola, NAVARRO URRIOS, Daniel, PITANTI, Alessandro, FERRARESE LUPI, Federico, GARRIDO FERNÁNDEZ, Blas, PAVESI, Lorenzo. Silicon nanocluster sensitization of erbium ions under low-energy optical excitation. _Journal of Applied Physics_. 2012. Vol. 111, núm. 9, pàgs. 094314. [consulta: 20 de gener de 2026]. ISSN: 0021-8979. [Disponible a: https://hdl.handle.net/2445/28443]