Carregant...
Fitxers
Tipus de document
ArticleVersió
Versió acceptadaData de publicació
Tots els drets reservats
Si us plau utilitzeu sempre aquest identificador per citar o enllaçar aquest document: https://hdl.handle.net/2445/47300
Progress in single junction microcrystalline silicon solar cells deposited by Hot-Wire CVD
Títol de la revista
Director/Tutor
ISSN de la revista
Títol del volum
Recurs relacionat
Resum
Hot-Wire Chemical Vapor Deposition has led to microcrystalline silicon solar cell efficiencies similar to those obtained with Plasma Enhanced CVD. The light-induced degradation behavior of microcrystalline silicon solar cells critically depends on the properties of their active layer. In the regime close to the transition to amorphous growth (around 60% of amorphous volume fraction), cells incorporating an intrinsic layer with slightly higher crystalline fraction and [220] preferential orientation are stable after more than 7000 h of AM1.5 light soaking. On the contrary, solar cells whose intrinsic layer has a slightly lower crystalline fraction and random or [111] preferential orientation exhibit clear light-induced degradation effects. A revision of the efficiencies of Hot-Wire deposited microcrystalline silicon solar cells is presented and the potential efficiency of this technology is also evaluated.
Matèries (anglès)
Citació
Col·leccions
Citació
FONRODONA TURON, Marta, SOLER VILAMITJANA, David, VILLAR, Fernando, ESCARRÉ I PALOU, Jordi, ASENSI LÓPEZ, José miguel, BERTOMEU I BALAGUERÓ, Joan, ANDREU I BATALLÉ, Jordi. Progress in single junction microcrystalline silicon solar cells deposited by Hot-Wire CVD. _Thin Solid Films_. 2006. Vol. 501, núm. 1-2, pàgs. 247-251. [consulta: 23 de gener de 2026]. ISSN: 0040-6090. [Disponible a: https://hdl.handle.net/2445/47300]