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2006

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Progress in single junction microcrystalline silicon solar cells deposited by Hot-Wire CVD

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http://dx.doi.org/10.1016/j.tsf.2005.07.146

Resum

Hot-Wire Chemical Vapor Deposition has led to microcrystalline silicon solar cell efficiencies similar to those obtained with Plasma Enhanced CVD. The light-induced degradation behavior of microcrystalline silicon solar cells critically depends on the properties of their active layer. In the regime close to the transition to amorphous growth (around 60% of amorphous volume fraction), cells incorporating an intrinsic layer with slightly higher crystalline fraction and [220] preferential orientation are stable after more than 7000 h of AM1.5 light soaking. On the contrary, solar cells whose intrinsic layer has a slightly lower crystalline fraction and random or [111] preferential orientation exhibit clear light-induced degradation effects. A revision of the efficiencies of Hot-Wire deposited microcrystalline silicon solar cells is presented and the potential efficiency of this technology is also evaluated.

Matèries

Cèl·lules solars, Silici, Deposició química en fase vapor, Energia solar

Matèries (anglès)

Solar cells, Silicon, Chemical vapor deposition, Solar energy

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Articles publicats en revistes (Física Aplicada)

Citació

FONRODONA TURON, Marta, et al. Progress in single junction microcrystalline silicon solar cells deposited by Hot-Wire CVD. Thin Solid Films. 2006. Vol. 501, num. 1-2, pags. 247-251. ISSN 0040-6090. [consulted: 29 of May of 2026]. Available at: https://hdl.handle.net/2445/47300

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