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2008-06-23

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Please use this identifier to cite or link to this item: https://hdl.handle.net/2445/24962

Analysis of S-rich CuIn(S,Se)2 layers for photovoltaic applications: Influence of the sulfurization temperature on the crystalline properties of electrodeposited and sulfurized CuInSe2 precursors

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http://dx.doi.org/10.1063/1.2939833

Abstract

This paper reports the microstructural analysis of S-rich CuIn(S,Se)2 layers produced by electrodeposition of CuInSe2 precursors and annealing under sulfurizing conditions as a function of the temperature of sulfurization. The characterization of the layers by Raman scattering, scanning electron microscopy, Auger electron spectroscopy, and XRD techniques has allowed observation of the strong dependence of the crystalline quality of these layers on the sulfurization temperature: Higher sulfurization temperatures lead to films with improved crystallinity, larger average grain size, and lower density of structural defects. However, it also favors the formation of a thicker MoS2 interphase layer between the CuInS2 absorber layer and the Mo back contact. Decreasing the temperature of sulfurization leads to a significant decrease in the thickness of this intermediate layer and is also accompanied by significant changes in the composition of the interface region between the absorber and the MoS2 layer, which becomes Cu rich. The characterization of devices fabricated with these absorbers corroborates the significant impact of all these features on device parameters as the open circuit voltage and fill factor that determine the efficiency of the solar cells.

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Electrònica, Cristal·lografia

Subject (English)

Electronics, Crystallography

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Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)

Citation

IZQUIERDO ROCA, Victor, et al. Analysis of S-rich CuIn(S,Se)2 layers for photovoltaic applications: Influence of the sulfurization temperature on the crystalline properties of electrodeposited and sulfurized CuInSe2 precursors. Journal of Applied Physics. 2008. Vol. 103, num. 123109-1-123109-7. ISSN 0021-8979. [consulted: 10 of June of 2026]. Available at: https://hdl.handle.net/2445/24962

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