Amb motiu del tancament d'estiu, la validació de documents es reprendrà a partir del 28 d'agost de 2026. Disculpeu les molèsties.
Con motivo del cierre de verano, la validación de documentos se reanudará a partir del 28 de agosto de 2026. Disculpad las molestias
Due to the summer closure, document validation will resume starting August 28, 2026. We apologize for any inconvenience.

Files

gorostiza.pdf (74.15 MB)

Document type

Doctoral thesis

Version

Published version

Publication date

2000-02-18

All rights reserved

Please use this identifier to cite or link to this item: https://hdl.handle.net/2445/34939

Metal Deposition on Silicon from Fluoride Solution.

Journal Title

Authors

Director/Tutor

Journal ISSN

Volume Title

Related resource

Abstract

[eng] Metallic deposits can be produced on the surface of silicon crystals by immersion in aqueous solutions containing fluoride and the metallic ions. This work aims to elucidate the general mechanism of the deposition process, based on "in situ" electrochemical measurements under potentiostatic control and "ex situ" microscopic and spectroscopic techniques. The mechanism developed takes into account the classical concepts of semiconductor electrochemistry, as well as the recent advances in the understanding of silicon chemistry. The consequences of this study and its technological applications are also discussed.

Subject

Silici, Electrònica, Superfícies (Matemàtica)

Subject (English)

Silicon, Electronics, Surfaces

Citation

Collections

Tesis Doctorals - Departament - Electrònica

Citation

GOROSTIZA LANGA, Pablo Ignacio. Metal Deposition on Silicon from Fluoride Solution. ISBN 8469990306. [consulted: 16 of August of 2026]. Available at: https://hdl.handle.net/2445/34939

Export metadata

JSON - METS

Share record