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1998

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Si us plau utilitzeu sempre aquest identificador per citar o enllaçar aquest document: https://hdl.handle.net/2445/8584

Improved equivalent circuit and analytical model for amorphous silicon solar cells and modules

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http://dx.doi.org/10.1109/16.658676

Resum

An improved equivalent circuit for hydrogenated amorphous silicon (a-Si:H) solar cells and modules is presented. It is based on the classic combination of a diode with an exponential current-voltage characteristic, of a photocurrent source plus a new term representing additional recombination losses in the i-layer of the device. This model/equivalent circuit matches the I(V) curves of a-Si:H cells over an illumination range of six orders of magnitude. The model clearly separates effects related to the technology of the device (series and parallel resistance) and effects related to the physics of the p-i-n junction (recombination losses). It also allows an effective /spl mu//spl tau/ product in the i-layer of the device to be determined, characterizing its state of degradation.

Matèries

Amorphous silicon solar cells and modules, Semiconductors amorfs, Hidrogen, Silicones, Cèl·lules solars, Semiconductors

Matèries (anglès)

Amorphous semiconductors, Electron-hole recombination, Elemental semiconductors, Equivalent circuits, Hydrogen, Losses, Semiconductor device models, Silicon, Solar cells

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Articles publicats en revistes (Física Aplicada)

Citació

MERTEN, Jens, et al. Improved equivalent circuit and analytical model for amorphous silicon solar cells and modules. IEEE Transactions on Electron Devices. 1998. Vol. 45, num. 2, pags. 423-429. ISSN 0018-9383. [consulted: 7 of September of 2026]. Available at: https://hdl.handle.net/2445/8584

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