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Article

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Accepted version

Publication date

2009

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Please use this identifier to cite or link to this item: https://hdl.handle.net/2445/47284

Optimization of KOH etching process to obtain textured substrates suitable for heterojunction solar cells fabricated by HWCVD

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http://dx.doi.org/10.1016/j.tsf.2009.01.024

Abstract

In this work, we have studied the texturization process of (100) c-Si wafers using a low concentration potassium hydroxide solution in order to obtain good quality textured wafers. The optimization of the etching conditions have led to random but uniform pyramidal structures with good optical properties. Then, symmetric heterojunctions were deposited by Hot-Wire CVD onto these substrates and the Quasi-Steady-State PhotoConductance technique was used to measure passivation quality. Little degradation in the effective lifetime and implicit open circuit voltage of these devices (< 20 mV) was observed in all cases. It is especially remarkable that for big uniform pyramids, the open-circuit voltage is comparable to the values obtained on flat substrates.

Subject

Deposició química en fase vapor, Cèl·lules solars, Teoria quàntica, Propietats òptiques, Aiguafort

Subject (English)

Chemical vapor deposition, Solar cells, Quantum theory, Optical properties, Etching

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Articles publicats en revistes (Física Aplicada)

Citation

MUÑOZ, D., et al. Optimization of KOH etching process to obtain textured substrates suitable for heterojunction solar cells fabricated by HWCVD. Thin Solid Films. 2009. Vol. 517, num. 12, pags. 3578-3580. ISSN 0040-6090. [consulted: 10 of June of 2026]. Available at: https://hdl.handle.net/2445/47284

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