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Si us plau utilitzeu sempre aquest identificador per citar o enllaçar aquest document: https://hdl.handle.net/2445/47284
Optimization of KOH etching process to obtain textured substrates suitable for heterojunction solar cells fabricated by HWCVD
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In this work, we have studied the texturization process of (100) c-Si wafers using a low concentration potassium hydroxide solution in order to obtain good quality textured wafers. The optimization of the etching conditions have led to random but uniform pyramidal structures with good optical properties. Then, symmetric heterojunctions were deposited by Hot-Wire CVD onto these substrates and the Quasi-Steady-State PhotoConductance technique was used to measure passivation quality. Little degradation in the effective lifetime and implicit open circuit voltage of these devices (< 20 mV) was observed in all cases. It is especially remarkable that for big uniform pyramids, the open-circuit voltage is comparable to the values obtained on flat substrates.
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MUÑOZ, D., CARRERAS SEGUÍ, Paz, ESCARRÉ I PALOU, Jordi, IBARZ, D., MARTÍN DE NICOLÁS, S., VOZ SÁNCHEZ, Cristóbal, ASENSI LÓPEZ, José miguel, BERTOMEU I BALAGUERÓ, Joan. Optimization of KOH etching process to obtain textured substrates suitable for heterojunction solar cells fabricated by HWCVD. _Thin Solid Films_. 2009. Vol. 517, núm. 12, pàgs. 3578-3580. [consulta: 20 de gener de 2026]. ISSN: 0040-6090. [Disponible a: https://hdl.handle.net/2445/47284]