Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/22078
Title: Extension of the impedance field method to the noise analysis of a semiconductor junction: Analytical approach
Author: Gomila Lluch, Gabriel
Bulashenko, Oleg
Rubí Capaceti, José Miguel
Kochelap, V. A.(Viacheslav Aleksandrovich)
Keywords: Semiconductors
Soroll electrònic
Díodes
Transistors
Camps elèctrics
Microelectrònica
Semiconductors
Electronic noise
Diodes
Transistors
Electric fields
Microelectronics
Issue Date: 1998
Publisher: American Institute of Physics
Abstract: We present an analytical procedure to perform the local noise analysis of a semiconductor junction when both the drift and diffusive parts of the current are important. The method takes into account space-inhomogeneous and hot-carriers conditions in the framework of the drift-diffusion model, and it can be effectively applied to the local noise analysis of different devices: n+nn+ diodes, Schottky barrier diodes, field-effect transistors, etc., operating under strongly inhomogeneous distributions of the electric field and charge concentration
Note: Reproducció del document publicat a: http://dx.doi.org/10.1063/1.367023
It is part of: Journal of Applied Physics, 1998, vol. 83, núm. 5, p. 2610-2618
URI: http://hdl.handle.net/2445/22078
ISSN: 0021-8979
Appears in Collections:Articles publicats en revistes (Electrònica)
Articles publicats en revistes (Física de la Matèria Condensada)

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