Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/32769
Title: High quality InAlN single layers lattice-matched to GaN grown by molecular beam epitaxy
Author: Gacevic, Z.
Fernández-Garrido, S.
Rebled, J. M. (José Manuel)
Estradé Albiol, Sònia
Peiró Martínez, Francisca
Calleja Pardo, Enrique
Keywords: Optoelectrònica
Semiconductors
Estructura cristal·lina (Sòlids)
Indi (Metall)
Optoelectronics
Semiconductors
Layer structure (Solids)
Indium
Issue Date: 2011
Publisher: American Institute of Physics
Abstract: We report on properties of high quality 60 nm thick InAlN layers nearly in-plane lattice-matched to GaN, grown on c-plane GaN-on-sapphire templates by plasma-assisted molecular beam epitaxy. Excellent crystalline quality and low surface roughness are confirmed by X-ray diffraction, transmission electron microscopy, and atomic force microscopy. High annular dark field observations reveal a periodic in-plane indium content variation (8 nm period), whereas optical measurements evidence certain residual absorption below the band-gap. The indium fluctuation is estimated to be 61.2% around the nominal 17% indium content via plasmon energy oscillations assessed by electron energy loss spectroscopy with sub-nanometric spatial resolution.
It is part of: Applied Physics Letters, 2011, vol. 99, p. 031103-1-031103-3
URI: http://hdl.handle.net/2445/32769
ISSN: 0003-6951
Appears in Collections:Articles publicats en revistes (Electrònica)

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