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| Issue Date | Title | Author(s) |
|---|---|---|
| 15-Feb-1997 | Analysis of geometrical effects on the behavior of transverse and longitudinal modes of amorphous silicon compounds | Moreno, J. A.; Garrido Fernández, Blas; Samitier i Martí, Josep; Morante i Lleonart, Joan Ramon |
| 1994 | Configurational statistical model for the damaged structure of silicon oxide after ion implantation | Garrido Beltrán, Lluís; Samitier i Martí, Josep; Morante i Lleonart, Joan Ramon; Montserrat i Martí, Josep; Domínguez, Carlos (Domínguez Horna) |
| 1992 | Anomalous optical and electrical recovery process of photoquenched EL2 defect produced by oxygen and boron ion implantation in gallium arsenide | Samitier i Martí, Josep; Marco Colás, Santiago; Pérez Rodríguez, Alejandro; Morante i Lleonart, Joan Ramon; Boher, P.; Renaud, M. |
| 1991 | On the artificial creation of the EL2 center by means of boron implantation in gallium arsenide | Morante i Lleonart, Joan Ramon; Pérez Rodríguez, Alejandro; Samitier i Martí, Josep; Romano Rodríguez, Albert |
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