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| Issue Date | Title | Author(s) |
|---|---|---|
| 1-Jul-1997 | Atomic diffusion induced by stress relaxation in InGaAs/GaAs epitaxial layers | Roura Grabulosa, Pere; Vilà i Arbonès, Anna Maria; Bosch Estrada, José; López de Miguel, Manuel; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon; Westwood, David I. |
| 15-Jan-1996 | Structure of 60° dislocations at the GaAs/Si interface | Vilà i Arbonès, Anna Maria; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon; Ruterana, Pierre; Loubradou, Marc; Bonnet, Roland |
| 1-Jul-1993 | Influence of mismatch on the defects in relaxed epitaxial InGaAs/GaAs(100) films grown by molecular beam epitaxy | Westwood, David I.; Woolf, D. A.; Vilà i Arbonès, Anna Maria; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon |
| 1997 | Caracterización estructural de capas epitaxiadas de InGaAs/InAlAs crecidas sobre substratos (111) de InP | Vilà i Arbonès, Anna Maria; Peiró Martínez, Francisca; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon |
| 1992 | Defectes en capes epitaxials d'arseniür de gal.li sobre silici | Vilà i Arbonès, Anna Maria; Herms Berenguer, Atilà; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon |
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