Search


Current filters:
Start a new search
Add filters:

Use filters to refine the search results.


Results 1-10 of 39 (Search time: 0.014 seconds).
Item hits:
Issue DateTitleAuthor(s)
1998Strain-induced quenching of optical transitions in capped self-assembled quantum dot structuresPrieto, J. A.; Armelles Reig, G.; Utzmeier, Thomas; Briones Fernández-Pola, Fernando; Ferrer, J. C.; Peiró Martínez, Francisca; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon
1-Jun-2001Nitrogen incorporation effects in Fe(001) thin filmsMenéndez Rio, José Luis; Armelles Reig, G.; Briones Fernández-Pola, Fernando; Cebollada, Alfonso; Peiró Martínez, Francisca; Güell Vilà, Frank; Cornet i Calveras, Albert; Fernández Gubieda Ruiz, María Luisa; Gutiérrez Echevarria, Jon; Meyer, C.
1-Oct-1996Competitive evolution of the fine contrast modulation and CuPt ordering in InGaP/GaAs layersDiéguez Barrientos, Àngel; Peiró Martínez, Francisca; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon; Alsina, F.; Pascual Gainza, Jordi
15-Jun-1998Surface roughness in InGaAs Channels of HEMT devices depending on the growth temperature: strain induced or due to alloy decompositionPeiró Martínez, Francisca; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon; Beck, M.; Py, M. A.
15-Jul-2002Effects of Nb doping on the TiO2 anatase-to-rutile phase transitionArbiol i Cobos, Jordi; Cerdà Belmonte, Judith; Dezanneau, Guilhem; Cirera Hernández, Albert; Peiró Martínez, Francisca; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon
1-Jul-1997Atomic diffusion induced by stress relaxation in InGaAs/GaAs epitaxial layersRoura Grabulosa, Pere; Vilà i Arbonès, Anna Maria; Bosch Estrada, José; López de Miguel, Manuel; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon; Westwood, David I.
15-May-1997Determination of the direct band-gap energy of InAlAs matched to InP by photoluminescence excitation spectroscopyRoura Grabulosa, Pere; López de Miguel, Manuel; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon
1-May-1997Raman scattering of InSb quantum dots grown on InP substratesArmelles Reig, G.; Utzmeier, Thomas; Postigo Resa, Pablo Aitor; Briones Fernández-Pola, Fernando; Ferrer, J. C.; Peiró Martínez, Francisca; Cornet i Calveras, Albert
15-Jan-1996Structure of 60° dislocations at the GaAs/Si interfaceVilà i Arbonès, Anna Maria; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon; Ruterana, Pierre; Loubradou, Marc; Bonnet, Roland
1-Jul-1994Electrical transport quantum effects in the In0.53Ga0.47As/In0.52Al0.48As heterostructure on siliconGeorgakilas, Alexander; Christou, Aris; Zekentes, Konstantinos; Mercy, J. M.; Konczewic, L. K.; Vilà i Arbonès, Anna Maria; Cornet i Calveras, Albert