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Title: | EFTEM-HRTEM characterization of Er-doped silicon nanocrystal-based oxides/nitrides for MOS light emitting devices |
Author: | Ruiz Caridad, Alicia |
Director/Tutor: | Peiró Martínez, Francisca Estradé Albiol, Sònia |
Keywords: | Nanocristalls semiconductors Propietats elèctriques Treballs de fi de grau Semiconductor nanocrystals Electric properties Bachelor's theses |
Issue Date: | Sep-2014 |
Abstract: | Er-doped silicon nanocrystal-based oxides/nitrides have been investigated. These layers are grown between a polycrystalline silicon electrode and a monocrystalline silicon substrate to allow electrical injection. Energy Filtered (EF-) and High Resolution (HR-) TEM characterization has been performed to provide microscopic insight onto the macroscopic optoelectronic properties of the samples. Evident Er-clustering has been observed in silicon dioxides but not in silicon nitrides, suggesting a better Er solubility and local environment when nitrogen is incorporated. Silicon nanocrystals have been observed in silicon-rich nitride layers, as expected, but also in a region close to the silicon dioxide-polysilicon interface in a layer with no nitrogen or Si excesses. This unexpected Si clusterization has been attributed to Si diffusion from the polycrystalline silicon electrode into the silicon dioxide as a consequence of the annealing treatment. The structural characterization carried out by HRTEM and EFTEM has been correlated with the optoelectronic properties of the devices. |
Note: | Treballs Finals de Grau de Física, Facultat de Física, Universitat de Barcelona, Any: 2014, Tutores: Francesca Peiró Martínez i Sonia Estradé Albiol |
URI: | http://hdl.handle.net/2445/59729 |
Appears in Collections: | Treballs Finals de Grau (TFG) - Física |
Files in This Item:
File | Description | Size | Format | |
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TFG-Ruiz-Caridad-Alicia.pdf | 553.72 kB | Adobe PDF | View/Open |
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