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Light induced defects in thermal annealed hydrogenated amorphous silicon
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The metastable defects of a-Si:H samples annealed at temperatures in the 300-550°C range have been studied by photothermal deflection spectroscopy (PDS). The light-soaked samples show an increase in optical absorption in the 0.8 to 1.5 eV range. The metastable defect density decreases when the annealing temperature increases, while the defect density increases. This decrease in the metastable defect density shows an almost linear correlation with the decrease in the hydrogen content of the samples, determined by IR transmission spectroscopy and thermal desorption spectroscopy.
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SERRA-MIRALLES, J., et al. Light induced defects in thermal annealed hydrogenated amorphous silicon. Solar Energy Materials and Solar Cells. 1992. Vol. 28, num. 1, pags. 49-57. ISSN 0927-0248. [consulted: 10 of June of 2026]. Available at: https://hdl.handle.net/2445/47502