Amb motiu del tancament d'estiu, la validació de documents es reprendrà a partir del 28 d'agost de 2026. Disculpeu les molèsties.
Con motivo del cierre de verano, la validación de documentos se reanudará a partir del 28 de agosto de 2026. Disculpad las molestias
Due to the summer closure, document validation will resume starting August 28, 2026. We apologize for any inconvenience.

Files

TFM Omar Olmedo.pdf (1.1 MB)

Document type

Master thesis

Publication date

2014-07

Publication license

cc-by-nc-nd (c) Olmedo Ferrer, Omar, 2014
Please use this identifier to cite or link to this item: https://hdl.handle.net/2445/59961

Inkjet printing of flexible MOS structures based on graphene and high-k dielectrics

Journal Title

Authors

Director/Tutor

Journal ISSN

Volume Title

Related resource

Abstract

MOS structures have been inkjet printed using silver, hafnium oxide (HfO2) and reduced graphene oxide (rGO). Main drawbacks with inkjet printing and electrospray deposition have been overcome. C-V characteristics of these devices have been measured and common phenomenology has been established. Deviations from known theory as well as technical improvement have been proposed.

Description

Màster Oficial en Física Avançada, Facultat de Física, Universitat de Barcelona, Curs: 2014, Tutors: Olga Casals i Albert Cirera

Subject

Metall-òxid-semiconductors, Impressió digital, Treballs de fi de màster

Subject (English)

Metal oxide semiconductors, Digital printing, Master's theses

Citation

Collections

Màster Oficial - Física Avançada

Citation

OLMEDO FERRER, Omar. Inkjet printing of flexible MOS structures based on graphene and high-k dielectrics. [consulted: 15 of August of 2026]. Available at: https://hdl.handle.net/2445/59961

Export metadata

JSON - METS

Share record