Inkjet printing of flexible MOS structures based on graphene and high-k dielectrics
| dc.contributor.advisor | Cirera Hernández, Albert | |
| dc.contributor.author | Olmedo Ferrer, Omar | |
| dc.date.accessioned | 2014-11-24T12:28:30Z | |
| dc.date.available | 2014-11-24T12:28:30Z | |
| dc.date.issued | 2014-07 | |
| dc.description | Màster Oficial en Física Avançada, Facultat de Física, Universitat de Barcelona, Curs: 2014, Tutors: Olga Casals i Albert Cirera | ca |
| dc.description.abstract | MOS structures have been inkjet printed using silver, hafnium oxide (HfO2) and reduced graphene oxide (rGO). Main drawbacks with inkjet printing and electrospray deposition have been overcome. C-V characteristics of these devices have been measured and common phenomenology has been established. Deviations from known theory as well as technical improvement have been proposed. | ca |
| dc.format.extent | 7 p. | |
| dc.format.mimetype | application/pdf | |
| dc.identifier.uri | https://hdl.handle.net/2445/59961 | |
| dc.language.iso | eng | ca |
| dc.rights | cc-by-nc-nd (c) Olmedo Ferrer, Omar, 2014 | |
| dc.rights.accessRights | info:eu-repo/semantics/openAccess | ca |
| dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/es/ | |
| dc.source | Màster Oficial - Física Avançada | |
| dc.subject.classification | Metall-òxid-semiconductors | cat |
| dc.subject.classification | Impressió digital | cat |
| dc.subject.classification | Treballs de fi de màster | cat |
| dc.subject.other | Metal oxide semiconductors | eng |
| dc.subject.other | Digital printing | eng |
| dc.subject.other | Master's theses | eng |
| dc.title | Inkjet printing of flexible MOS structures based on graphene and high-k dielectrics | eng |
| dc.type | info:eu-repo/semantics/masterThesis | ca |
Fitxers
Paquet original
1 - 1 de 1