Inkjet printing of flexible MOS structures based on graphene and high-k dielectrics

Vista senzilla d'ítem
dc.contributor.advisorCirera Hernández, Albert
dc.contributor.authorOlmedo Ferrer, Omar
dc.date.accessioned2014-11-24T12:28:30Z
dc.date.available2014-11-24T12:28:30Z
dc.date.issued2014-07
dc.descriptionMàster Oficial en Física Avançada, Facultat de Física, Universitat de Barcelona, Curs: 2014, Tutors: Olga Casals i Albert Cireraca
dc.description.abstractMOS structures have been inkjet printed using silver, hafnium oxide (HfO2) and reduced graphene oxide (rGO). Main drawbacks with inkjet printing and electrospray deposition have been overcome. C-V characteristics of these devices have been measured and common phenomenology has been established. Deviations from known theory as well as technical improvement have been proposed.ca
dc.format.extent7 p.
dc.format.mimetypeapplication/pdf
dc.identifier.urihttps://hdl.handle.net/2445/59961
dc.language.isoengca
dc.rightscc-by-nc-nd (c) Olmedo Ferrer, Omar, 2014
dc.rights.accessRightsinfo:eu-repo/semantics/openAccessca
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/es/
dc.sourceMàster Oficial - Física Avançada
dc.subject.classificationMetall-òxid-semiconductorscat
dc.subject.classificationImpressió digitalcat
dc.subject.classificationTreballs de fi de màstercat
dc.subject.otherMetal oxide semiconductorseng
dc.subject.otherDigital printingeng
dc.subject.otherMaster's theseseng
dc.titleInkjet printing of flexible MOS structures based on graphene and high-k dielectricseng
dc.typeinfo:eu-repo/semantics/masterThesisca

Fitxers

Paquet original

Mostrant 1 - 1 de 1
Miniatura
Nom:
TFM Omar Olmedo.pdf
Mida:
1.1 MB
Format:
Adobe Portable Document Format
Descarregar

Col·leccions

Màster Oficial - Física Avançada