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1996-03-15

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Please use this identifier to cite or link to this item: https://hdl.handle.net/2445/24791

Epitaxial growth of Y-doped SrZrO3 films on MgO by pulsed laser deposition

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http://dx.doi.org/10.1063/1.361234

Abstract

Epitaxial thin films of Y¿doped SrZrO3 have been grown on MgO(001) by pulsed laser deposition. The deposition process has been performed at temperatures of 1000¿1200¿°C and at an oxygen pressure of 1.5×10¿1 mbar. The samples are characterized by Rutherford backscattering spectrometry/channeling (RBS/C) and x¿ray diffraction (XRD). We found an epitaxial relationship of SrZrO3 (0k0) [101]¿MgO (001) [100]. Good crystalline quality is confirmed by RBS/C minimum yield values of 9% and a FWHM of 0.35° of the XRD rocking curve.

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Pel·lícules fines, Làsers, Ions, Superconductivitat

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Thin films, Lasers, Ions, Superconductivity

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Articles publicats en revistes (Física Aplicada)

Citation

BECKERS, L., et al. Epitaxial growth of Y-doped SrZrO3 films on MgO by pulsed laser deposition. Journal of Applied Physics. 1996. Vol. 79, num. 6, pags. 3337-3339. ISSN 0021-8979. [consulted: 13 of June of 2026]. Available at: https://hdl.handle.net/2445/24791

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