Epitaxial growth of Y-doped SrZrO3 films on MgO by pulsed laser deposition

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dc.contributor.authorBeckers, L.cat
dc.contributor.authorSánchez Barrera, Florenciocat
dc.contributor.authorSchubert, J.cat
dc.contributor.authorZander, W.cat
dc.contributor.authorBuchal, Ch.
dc.date.accessioned2012-05-03T07:17:02Z
dc.date.available2012-05-03T07:17:02Z
dc.date.issued1996-03-15
dc.description.abstractEpitaxial thin films of Y¿doped SrZrO3 have been grown on MgO(001) by pulsed laser deposition. The deposition process has been performed at temperatures of 1000¿1200¿°C and at an oxygen pressure of 1.5×10¿1 mbar. The samples are characterized by Rutherford backscattering spectrometry/channeling (RBS/C) and x¿ray diffraction (XRD). We found an epitaxial relationship of SrZrO3 (0k0) [101]¿MgO (001) [100]. Good crystalline quality is confirmed by RBS/C minimum yield values of 9% and a FWHM of 0.35° of the XRD rocking curve.eng
dc.format.extent3 p.
dc.format.mimetypeapplication/pdf
dc.identifier.idgrec148288
dc.identifier.issn0021-8979
dc.identifier.urihttps://hdl.handle.net/2445/24791
dc.language.isoengeng
dc.publisherAmerican Institute of Physics
dc.relation.isformatofReproducció del document publicat a: http://dx.doi.org/10.1063/1.361234
dc.relation.ispartofJournal of Applied Physics, 1996, vol. 79, núm. 6, p. 3337-3339
dc.relation.urihttp://dx.doi.org/10.1063/1.361234
dc.rights(c) American Institute of Physics, 1996
dc.rights.accessRightsinfo:eu-repo/semantics/openAccess
dc.sourceArticles publicats en revistes (Física Aplicada)
dc.subject.classificationPel·lícules finescat
dc.subject.classificationLàserscat
dc.subject.classificationIonscat
dc.subject.classificationSuperconductivitatcat
dc.subject.otherThin filmseng
dc.subject.otherLaserseng
dc.subject.otherIonseng
dc.subject.otherSuperconductivityeng
dc.titleEpitaxial growth of Y-doped SrZrO3 films on MgO by pulsed laser depositioneng
dc.typeinfo:eu-repo/semantics/article
dc.typeinfo:eu-repo/semantics/publishedVersion

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