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Revealing Fast Cu-Ion Transport and Enhanced Conductivity at the CuInP2S6-In4/3P2S6 Heterointerface
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Van der Waals layered ferroelectrics, such as CuInP2S6 (CIPS), offer a versatile platform for miniaturization of ferroelectric device technology. Control of the targeted composition and kinetics of CIPS synthesis, enables the formation of stable self-assembled heterostructures of ferroelectric CIPS and non-ferroelectric In4/3P2S6 (IPS). Here, we use advanced quantitative scanning probe microscopy and density-functional-theory to explore in detail the nanoscale variability in dynamic functional properties of the CIPS-IPS heterostructure. We report evidence of fast ionic transport mediating an appreciable out-of-plane electromechanical response of CIPS in the paraelectric phase. Further, we map the local dielectric constant and ionic conductivity on the nanoscale as we thermally stimulate the ferroelectric-paraelectric phase transition, recovering the bulk dielectric peak of the transition at the nanoscale. Finally, we discover a conductivity enhancement at the CIPS/IPS interface, indicating the possibility of engineering its interfacial properties for next generation device applications.
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CHECA NUALART, Martí, et al. Revealing Fast Cu-Ion Transport and Enhanced Conductivity at the CuInP2S6-In4/3P2S6 Heterointerface. ACS Nano. 2022. Vol. 16, num. 9, pags. 15347-15357. ISSN 1936-0851. [consulted: 7 of July of 2026]. Available at: https://hdl.handle.net/2445/197427